Pdf nincs hozzá, de adatokat azért találni:
5N2307
Silicon N Channel MOS FET, TO-263, 230 V, 35 A, 5N2307, Renesas
5N2307 absolute maximum ratings:
Drain to source voltage, VDSS: 230 V;
Gate to source voltage, VGSS: ±30 V;
Drain current, ID: 35 A;
Drain peak current, ID (pulse): 140 A;
Body-drain diode reverse drain current, IDR: 35 A;
Body-drain diode reverse drain peak current, IDR (pulse): 140 A;
Avalanche current, IAP: 18 A;
Channel dissipation, Pch: 60 W;
Channel to case thermal impedance, θch-c: 2.08℃/W;
Channel temperature, Tch: 150℃;
Storage temperature, Tstg: –55 to +150℃.